Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling
| Autor: | Thilo Reusch, Andreas Klein, Jürgen Gassmann, Sergey V. Yampolskii, Yuri A. Genenko |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
In situ Chemistry business.industry Doping Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Organic semiconductor General Energy Mean field theory X-ray photoelectron spectroscopy 0103 physical sciences Optoelectronics Physical and Theoretical Chemistry 0210 nano-technology business HOMO/LUMO Diode Ultraviolet photoelectron spectroscopy |
| Zdroj: | The Journal of Physical Chemistry C. 120:10466-10475 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | The interface properties between Sn-doped In2O3 (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current–voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current–voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σUPS = 0.22 eV and that derived from simulations is σsim = 0.23 eV. |
| Databáze: | OpenAIRE |
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