| Autor: |
Sanket Sant, Matthew Goeckner, David W. Gidley, B. E. E. Kastenmeier, Lawrence J. Overzet, Huagen Peng, E. A. Joseph |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1684 |
| ISSN: |
1071-1023 |
| Popis: |
Porous methylsilsesquioxane-based spin-on films with pore sizes of 1.5–2nm and porosities ranging from 0% to 32% have been exposed to a variety of processing environments such as fluorocarbon or oxygen containing plasmas and TaN atomic layer deposition to determine the integratability of the films. The porosity of the low-κ films was found to decrease during processing due to tantalum and fluorine indiffusion (fluorine potentially depositing as fluorocarbon film in the pores) while oxygen indiffusion depleted carbon (possibly by forming volatile CO and CO2). Carbon removal from the low-κ film alters the film’s dielectric constant and refractive index. The depth of the indiffusion appears to be independent of diffusant (fluorocarbon, oxygen, or tantalum), ranging from 40to150nm, and to correlate directly to the pore structure. It was also found that water (moisture) in these films significantly affects the measured porosity as well as can be used to reduce the indiffusion of fluorine containing molecules b... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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