Autor: |
James A. Bruce, Dianne L. Sundling, William C. Leipold, William M. Chu, Anne E. McGuire, Scott M. Mansfield, Lars W. Liebmann, Michael Cross, Ioana Graur, Joshua J. Krueger |
Rok vydání: |
2001 |
Předmět: |
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Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
Popis: |
Sub-resolution assist features (SRAF) have been shown to provide significant process window enhancement and across chip line-width variation reduction when used in conjunction with modified illumination lithography. Work previously presented at this conference has focused on the optimization of sraf design rules that specify the predominantly one dimensional placement and width of assist features as a function of layout pitch. This paper will recount the optimization of SRAF style options that specify how SRAF are to behave in realistic two dimensional circuit layouts. Based on the work done to strike the correct balance between sraf manufacturability, CAD turnaround time, and lithographic benefit in IBM's early product implementation exercises, the evolution of sraf style options is presented. Using simulation as well as exposure data, this paper explores the effect of various two dimensional sraf layout solutions and demonstrates the use of model based verification in the optimization of sraf style options. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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