Insituinvestigation of the low‐pressure metalorganic chemical vapor deposition of lattice‐mismatched semiconductors using reflectance anisotropy measurements

Autor:	Bernard Drevillon, Franck Omnes, M. Defour, Manijeh Razeghi, Stephanie M. Koch, Olivier Acher
Rok vydání:	1990
Předmět:	In situ Condensed matter physics business.industry Chemistry Nucleation General Physics and Astronomy Chemical vapor deposition Surface finish Reflectivity Condensed Matter::Materials Science Optics Semiconductor Lattice (order) Anisotropy business
Zdroj:	Journal of Applied Physics. 68:3564-3577
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.346316
Popis:	The growth of InAs on InP and InP on GaAs is investigated using reflectance anisotropy (RA) measurements. Very large optical anisotropies are observed, related to the three‐dimensional growth mode of these materials. A model is proposed to account for the optical properties of the samples, using effective medium theories to describe the roughness. Good quantitative agreement is obtained for small roughness thickness, and a qualitative description is found for larger roughness features. The RA technique is found to be very useful to monitor the growth of lattice‐mismatched materials, particularly at the nucleation stage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::28d050d5b6eeb4fb438abce0ff317156 https://doi.org/10.1063/1.346316 Zobrazit plný text záznamu