Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

Autor:	Brian Skromme, R. P. Vaudo, J. Jayapalan, V. M. Phanse
Rok vydání:	1999
Předmět:	Photoluminescence Materials science Physics and Astronomy (miscellaneous) Impurity Hydride Exciton Excited state Binding energy Atomic physics Epitaxy Luminescence
Zdroj:	Applied Physics Letters. 74:2358-2360
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.123850
Popis:	Low-temperature (1.7–20 K) photoluminescence and reflectance are used to investigate the free and bound exciton and shallow impurity states in GaN. A 300-μm-thick GaN layer grown by hydride vapor phase epitaxy on sapphire(0001), with an exceptionally low dislocation density (3×106 cm−2) is used to obtain very high quality spectra. Both free and bound n=2 excitons are identified, leading to a confirmation of the A free exciton binding energy as about 26.4 meV, independent of strain. Principal neutral donor-bound exciton (D0,X) peaks involving two to three different donors are resolved, as are two-electron satellites involving up to five different residual donors with binding energies ranging from 22 to 34.5 meV.
Databáze:	OpenAIRE
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