The miscibility gap region in liquid metal-chalcogen alloys
| Autor: | Yu. Plevachuk, B. Sokolovskii, V. Didoukh |
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| Rok vydání: | 2001 |
| Předmět: |
Liquid metal
Materials science Spinodal decomposition Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal Chalcogen Electrical resistivity and conductivity visual_art Argon gas Materials Chemistry visual_art.visual_art_medium Physical and Theoretical Chemistry Spectroscopy |
| Zdroj: | Journal of Molecular Liquids. 93:225-228 |
| ISSN: | 0167-7322 |
| DOI: | 10.1016/s0167-7322(01)00234-3 |
| Popis: | Electrical conductivity measurements were performed for liquid immiscible (In x Tl 1−x ) 0.80 Se 0.20 , (In x Tl 1−x ) 0.80 Te 0.20 and In 0.80 (Se x Te 1−x ) 0.20 alloys at temperatures up to 1200 K under ambient pressures of argon gas (up to 50 MPa). The electrical conductivity shows the same dependence as binary liquid alloys which have a metal-nonmetal transition during the mixing-demixing process. It was revealed that variation of Se-to-Te ratio at constant content of metal as well as variation of Tl-to-In ratio at constant content of chalcogen change the properties of coexisting liquids and affect the temperature of phase separation. The results are analyzed in comparison with available data for immiscible In-Se, In-Te, Tl-Se, Tl-Te and Tl-Se-Te alloys. |
| Databáze: | OpenAIRE |
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