Attenuation losses in electron cyclotron resonance plasma etched AlGaAs waveguides

Autor:	M. Hafich, C. T. Fuller, Randy J. Shul, Charles T. Sullivan, M. B. Snipes, J. W. Lee, C. Constantine, G.B. McClellan, Stephen J. Pearton
Rok vydání:	1995
Předmět:	Plasma etching Chemistry business.industry Attenuation BCL3 Plasma Photoresist Condensed Matter Physics Electron cyclotron resonance Electronic Optical and Magnetic Materials Wavelength Optics Resist Materials Chemistry Electrical and Electronic Engineering business
Zdroj:	Solid-State Electronics. 38:2047
ISSN:	0038-1101
Popis:	AlGaAs GaAs ridge waveguides with fundamental mode attenuation ≤ 1 dBcm−1 at a wavelength of 1.32 μm and channel widths of 4–4.5 μm are realized by ECR (Electron Cyclotron Resonance) plasma etching in BCl3/Cl2/Ar/N2 chemistries. The choice of both plasma chemistry and initial mask scheme (single layer photoresist or trilevel resist) has a significant effect on the attenuation losses.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::28c714996269984ca0e02015f3a80243 https://doi.org/10.1016/0038-1101(95)00034-q Zobrazit plný text záznamu Full Text from ScienceDirect