Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400–700 °C
| Autor: | L. N. Safronov, M. B. Gulyev, Irina V. Antonova, Svetlana A. Smagulova |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Conductivity Condensed Matter Physics Acceptor Oxygen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Thermal Electron beam processing Optoelectronics Irradiation Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 66:385-391 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(02)00914-0 |
| Popis: | The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400-700 °C was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T ∼ 400 °C. Non-uniform generation of TDs and thermal acceptors was found for an annealing temperature of 450 °C. The formation of areas with p- and n-type conductivity correlates with the non-uniform distribution of oxygen in silicon. The temperature interval of thermal acceptor generation in electron-irradiated, Cz-grown silicon was found to be very narrow around 450 °C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect