Improving the Transient Thermal Characterization of GaN HEMTs
| Autor: | Luke Yates, Samuel Graham, Georges Pavlidis, Dustin Kendig |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky diode Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Temperature measurement law.invention chemistry.chemical_compound Semiconductor chemistry law Logic gate 0103 physical sciences Calibration Optoelectronics Transient (oscillation) 0210 nano-technology business Light-emitting diode |
| Zdroj: | 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm). |
| DOI: | 10.1109/itherm.2018.8419649 |
| Popis: | Transient thermoreflectance imaging (TTI) is a thermometry technique employed to map the surface temperature distribution of GaN HEMTs. The accuracy of the technique is dependent on applying the correct thermoreflectance coefficient to the region of interest on the device surface. TTI has shown high accuracy when measuring the temperature rise of metals such as Schottky contacts but the technique has never been verified when applied to semiconductors. Using UV LED excitation sources, TTI of the GaN channel in GaN/Si HEMTs is presented and verified for the first time via the comparison of the gate metal temperature. A pixel by pixel calibration method is implemented to improve the spatial accuracy and account for any variability in the thermoreflectance coefficient across the device. The improvements of TTI discussed in this study make the technique an accurate and effective method to measure the temperature distribution of both the gate metal and GaN. |
| Databáze: | OpenAIRE |
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