| Autor: |
A. Ivashchenko, I. Kerner |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748). |
| DOI: |
10.1109/smicnd.2004.1403040 |
| Popis: |
This work estimates the perfection of films/substrate boundary quality in SnO/sub 2/ thin films. The relation between activation energy of film conductivity and film thickness is studied. The numerical simulation show that electrical conductivity of SnO/sub 2/ thin film near 3D-2D transition is described well within the framework of percolation theory. In some cases the dependence of the activation energy on the film thickness allows one to examine the film perfection. Thus, the relation between electrical conductivity, film microstructure, and thickness gives an effective instrument to control thin film gas sensor parameters. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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