InAs/GaAs single-electron quantum dot qubit

Autor:	Fuhua Yang, Zhichuan Niu, Hou-Zhi Zheng, Jian-Bai Xia, Jin-Long Liu, Song-Lin Feng, Shu-Shen Li
Rok vydání:	2001
Předmět:	Physics Condensed matter physics Quantum state Quantum dot laser Quantum dot Qubit Quantum mechanics Principal quantum number Quantum point contact General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Quantum dissipation Quantum computer
Zdroj:	Journal of Applied Physics. 90:6151-6155
ISSN:	1089-7550 0021-8979
Popis:	The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::28b0f6f28daaf027a62c5feb7145fcbb https://doi.org/10.1063/1.1416855 Zobrazit plný text záznamu