Organosilicon/silicon oxide gas barrier structure encapsulated flexible plastic substrate by using plasma-enhanced chemical vapor deposition
| Autor: | Cheng-Yang Wu, Ming-Shin Jeng, Ren-Mao Liao, Li-Wei Lai, Day-Shan Liu |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Surfaces and Interfaces General Chemistry Chemical vapor deposition Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Chemical engineering Plasma-enhanced chemical vapor deposition Materials Chemistry Polyethylene terephthalate Organic chemistry Silicon oxide Layer (electronics) Tetramethylsilane Organosilicon |
| Zdroj: | Surface and Coatings Technology. 206:4685-4691 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2012.05.080 |
| Popis: | An organosilicon/silicon oxide (SiO x ) multilayered barrier structure was consecutively deposited onto the polyethylene terephthalate (PET) substrate by plasma-enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) monomer and TMS–oxygen gas mixture, respectively. The thickness of the SiO x film directly deposited onto the PET substrate was firstly designed to perform the best barrier property to water vapor permeation, which also possessed the optimal surface uniformity and Si O Si structural order. By insetting an adequate thickness of the organosilicon layer plasma-polymerized from TMS monomer between the SiO x film and PET substrate, the water vapor transmission rate (WVTR) was further improved. The residual internal stress of such organosilicon/SiO x barrier structure was significantly lower than that of a single SiO x film deposited directly on the substrate. The improvement on the structural quality and surface densification of the organosilicon/SiO x barrier structures was discussed and observed from their chemical bond configurations and surface morphologies. Accordingly, low water vapor permeation below the MOCON detection limit ( − 2 g/m 2 /day) was achievable from the PET substrate coated with the 6-pairs of the organosilicon/SiO x multilayered barrier structure by PECVD using the same monomer precursor. |
| Databáze: | OpenAIRE |
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