A cascadable InGaAsP-InP optoelectronic smart pixel with low switching energy
| Autor: | Dong-Su Kim, P.E. Burrows, K. Beyzavi, Stephen R. Forrest, Chih-Ping Chao |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Very-large-scale integration
Materials science Differential gain business.industry Bipolar junction transistor Heterojunction Optical switch Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor laser theory Photodiode law.invention Gallium arsenide chemistry.chemical_compound Optics chemistry law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 7:1162-1164 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.466577 |
| Popis: | We demonstrate for the first time a 1.3-/spl mu/m wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity surface-emitting lasers. The circuit functions as a cascadable optical switch with an on/off ratio of 6, and a maximum optical input/output differential gain of 6. At a bit rate of 100 Mb/s, a record low switching energy of 30 fJ was observed while maintaining circuit gain and cascadability. This switching energy is the lowest reported to date for an optoelectronic smart pixel. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|