Bismuth-Based Pyrochlore Thin Films Deposited at Low Temperatures for Embedded Capacitor Applications

Autor: Seung-Hyun Sohn, Woon-Chun Kim, Hyung-Dong Kang, Jong-Hyun Park, Cheng-Ji Xian, Yul-Kyo Chung, Soon-Gil Yoon, Hyun-Ju Jin, Jin-Seok Moon, Hyung-Mi Jung, Sung-Taek Lim, Seung Eun Lee, Nak-Jin Seong, Jeong-Won Lee
Rok vydání: 2006
Předmět:
Zdroj: Japanese Journal of Applied Physics. 45:7325-7328
ISSN: 1347-4065
0021-4922
DOI: 10.1143/jjap.45.7325
Popis: Various bismuth-based pyrochlore films were deposited on copper clad laminate substrates at temperatures below 150 °C by pulsed laser deposition for embedded capacitor applications. The films showed smooth and dense morphologies during deposition at room temperature. Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore films showed the most stable dielectric properties and leakage current behaviors as a function of film thickness and deposition temperature. The capacitance density and breakdown field of 150-nm-thick-BMN films deposited at 150 °C were approximately 325 nF/cm2 and 410 kV/cm, respectively. The BMN films showed a dielectric constant of 55, a dielectric loss of 1.6% at 100 kHz, and a leakage current density of 1×10-8 A/cm2 at an applied field of 250 kV/cm. Metal/insulator/metal (MIM) capacitors including various bismuth-based pyrochlore films are expected to be promising candidates for printed circuit board (PCB)-embedded capacitors.
Databáze: OpenAIRE