Gate oxide degradation assessment by electrical stress and capacitance measurements
| Autor: | Olivier Gourhant, Pascal Masson, Franck Julien, Jerome Goy, Giada Ghezzi, Jean-Luc Ogier, Thibault Kempf, Dann Morillon, Clement Pribat, Alexandre Villaret, N. Cherault, Stephan Niel, Philippe Lorenzini |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength business.industry 020208 electrical & electronic engineering Oxide 02 engineering and technology Trapping 01 natural sciences Capacitance Stress (mechanics) chemistry.chemical_compound Reliability (semiconductor) chemistry Logic gate Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business |
| Zdroj: | 2018 International Integrated Reliability Workshop (IIRW). |
| DOI: | 10.1109/iirw.2018.8727082 |
| Popis: | In this paper, the reliability of thick SiO 2 gate oxides is assessed using quasi-static and multi-frequency capacitance measurements after constant current stress. A comprehensive study of oxide wear-out is presented, highlighting trapping mechanisms and switching states generation occurring during stress at high electric fields. Measurements are performed on furnace grown and HTO-based oxides and the correlation with lifetimes extrapolated from time-dependent dielectric breakdown is discussed. |
| Databáze: | OpenAIRE |
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