Preparation of ScAlN films as a function of sputtering atmosphere
| Autor: | Tang Jialin, Dong Zhou, Niu Dongwei, Chengtao Yang, Yixi Yang |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Doping chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Piezoelectricity Nitrogen Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystal Atmosphere Full width at half maximum chemistry Sputtering 0103 physical sciences Electrical and Electronic Engineering Composite material 0210 nano-technology |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 27:4788-4793 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-016-4359-y |
| Popis: | Sc doped AlN films were deposited by dc reactive magnetron sputtering on (100) p-type silicon substrates mixed with Ar–N2 gas atmosphere. It is appropriate for a wide variety of applications for the excellent piezoelectric properties, which closely depends on their crystal structures and morphological properties. In this paper, we research the influence of sputtering atmosphere including nitrogen proportion from 30 to 60 % and pressure from 0.4 to 0.8 Pa on sputtering rate, crystal quality and electric properties. It indicated that the sputtering rate strongly relied on the condition atmosphere, decreasing with increasing of pressure and nitrogen proportion. The best c-axis oriented ScAlN film could be prepared at low pressure of 0.4 Pa and reasonable nitrogen proportion of 35 %, presenting full width at half maximum of 1.7°. Moreover, the results found that the electric properties are demonstrated closely depending on the crystal quality, too. |
| Databáze: | OpenAIRE |
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