CMOS photodetector systems for low-level light applications
Autor: | M. Jamal Deen, N. Faramarzpour, Qiyin Fang, Munir M. El-Desouki, Shahram Shirani |
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Rok vydání: | 2007 |
Předmět: |
CMOS sensor
Materials science Comparator ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS Photodetector Context (language use) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Signal-to-noise ratio CMOS Integrator Electronic engineering Electrical and Electronic Engineering Image sensor MathematicsofComputing_DISCRETEMATHEMATICS |
Zdroj: | Journal of Materials Science: Materials in Electronics. 20:87-93 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-007-9455-6 |
Popis: | In this work, we have designed, fabricated and measured the performance of three different active pixel sensor (APS) structures. These APS structures are studied in the context of applications that require low-level light detection systems. The three APS structures studied were—a conventional APS, an APS with a comparator, and an APS with an integrator. A special focus of our study was on both the signal and noise characteristics of each APS structure so the key performance metric of signal-to-noise ratio can be computed and compared. The pixel structures that are introduced in this work can cover a wide range of applications, such as high resolution digital photography using the APS with a comparator, to ultra-sensitive biomedical measurements using the APS with an integrator. |
Databáze: | OpenAIRE |
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