Future of power semiconductors

Autor: Gourab Chiyoda-ku Majumdar
Rok vydání: 2004
Předmět:
Zdroj: 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).
DOI: 10.1109/pesc.2004.1355704
Popis: A brief history of power semiconductor devices, starting from its bipolar based origin to the present day IGBT Modules and intelligent power modules (IPMs), has been reviewed in the beginning of this paper. The review is then followed by an analysis of the changing requirements from the application fields and a projection of future growth for power semiconductors to comply with such needs. The paper particularly details the progresses made for near future options related to the IGBT chip technology, including a 'reverse-conducting type' and a 'reverse-blocking type' device concepts, and prospects of silicon carbide based power semiconductors for far future power conversion applications.
Databáze: OpenAIRE