| Autor: |
Lihao Wang, Zhonghan Deng, Yunpeng Jia, Yuanfu Zhao, Liang Wang |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED). |
| DOI: |
10.1109/icreed52909.2021.9588747 |
| Popis: |
In this paper, an experimental characterization of the behavior of commercial 200V/48A Enhancement-mode GaN HEMTs under heavy ion irradiation is presented. The damage caused by SEE may cumulative and permanent, which makes the drain leakage current gradually increase. Regardless of whether SEE occurs, the threshold voltage will shift after heavy ion irradiation. The increase in output capacitance and reverse transfer capacitance means that the AlGaN buffer layer is partially damaged, resulting in an increase in drain leakage current. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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