Vapor-phase grafting of a model aminosilane compound to Al2O3, ZnO, and TiO2 surfaces prepared by atomic layer deposition
Autor: | Edward Barry, Anil U. Mane, Julia G. Murphy, Vepa Rozyyev, Jeffrey W. Elam, Steven J. Sibener |
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Rok vydání: | 2021 |
Předmět: |
Materials science
General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Quartz crystal microbalance 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Silane 0104 chemical sciences Surfaces Coatings and Films chemistry.chemical_compound Atomic layer deposition X-ray photoelectron spectroscopy chemistry Chemical engineering Silanization Monolayer Triethoxysilane Surface modification 0210 nano-technology |
Zdroj: | Applied Surface Science. 562:149996 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2021.149996 |
Popis: | Atomic layer deposition (ALD) is a highly versatile surface functionalization technique that can conformally coat both planar and porous substrates. Here we use ALD metal oxide layers to establish a well-defined starting surface for vapor-phase surface organic modification. Vapor-phase (3-aminopropyl)triethoxysilane (APTES) surface silanization of ALD Al2O3, ZnO and TiO2 surfaces were studied at 100 °C, 150 °C and 200 °C. In situ quartz crystal microbalance (QCM) and Fourier-transform infrared (FTIR) spectroscopy measurements, and ex situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) measurements showed uniform monolayer silane formation through self-limiting APTES reaction. We observed a higher surface density of grafted APTES species following silanization at 100 °C compared to 200 °C, and we attribute this to the temperature-dependent reactivity of the surface hydroxyls and changes in the mode of APTES reaction. The FTIR and XPS measurements revealed that APTES reacts with Al2O3 and ZnO exclusively through metal siloxy bond formation. However, APTES reacts with TiO2 through both siloxy bond formation and ammonium salt formation via the amine group. |
Databáze: | OpenAIRE |
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