Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

Autor:	A. A. Kalashnikova, A. Privat, K. B. Bu-Khasan, Aleksandr E. Koziukov, K. Muthuseenu, M. Y. Vyrostkov, Kenneth F. Galloway, Hugh J. Barnaby, T. A. Maksimenko
Rok vydání:	2021
Předmět:	Nuclear and High Energy Physics Materials science Silicon business.industry chemistry.chemical_element Planar Nuclear Energy and Engineering chemistry Gate oxide Logic gate Electric field MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering Power MOSFET business
Zdroj:	IEEE Transactions on Nuclear Science. 68:611-616
ISSN:	1558-1578 0018-9499
Popis:	This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When an incident heavy-ion strike is perpendicular to the gate oxide, the SEGR tolerances of SJ power MOSFETs (SJMOSs) and VDMOSs are similar. But, for heavy-ion strikes that are at different angles, SJMOS has better SEGR tolerance than VDMOS. This improved performance of SJMOS is due to the presence of an additional horizontal electric field component in SJMOS devices. This is validated using the experimental data and simulation results in this article.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::28746f2d3bbfd0dbeda4879d2ffa2b95 https://doi.org/10.1109/tns.2021.3053168 Zobrazit plný text záznamu