Temperature dependent relocation of the cesium primary ion beam during SIMS analysis
| Autor: | Jerry L. Hunter, Christopher Winkler, Andrew Giordani, Jay Tuggle |
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| Rok vydání: | 2014 |
| Předmět: |
Ion beam
Silicon Scanning electron microscope Chemistry Energy-dispersive X-ray spectroscopy Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Ion Secondary ion mass spectrometry X-ray photoelectron spectroscopy Scanning transmission electron microscopy Materials Chemistry |
| Zdroj: | Surface and Interface Analysis. 46:31-34 |
| ISSN: | 0142-2421 |
| DOI: | 10.1002/sia.5652 |
| Popis: | The ability to control and accurately measure the cesium concentration, [Cs], is a critical step toward understanding the role of Cs in the SIMS MCs+ technique. We have developed a method to alter the instantaneous [Cs] by using electron gun heating (in situ) during Cs bombardment and found that heating (ex situ) during the X-ray photoelectron spectroscopy (XPS) analysis provides a qualitative depth distribution of the implanted Cs. The effectiveness of in situ and ex situ heating is explored on (100) silicon and (100) indium arsenide. Cs build-up curves are studied to determine if in situ heating produces secondary ion yields that are favorable for the MCs+ technique. In addition to XPS, scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and scanning transmission electron microscopy/energy dispersive spectroscopy (STEM/EDS) are utilized to measure [Cs]. The goal of this work is to improve the quantification of the MCs+ technique used in SIMS by understanding the material dependent behavior (incorporation and retention) of Cs and how it affects the MCs+ analysis. Copyright © 2014 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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