Nitrogen-incorporation induced changes in the microstructure of nanocrystalline WO3 thin films
| Autor: | M. Noor-A-Alam, S. K. Gullapalli, Mark H. Engelhard, R.S. Vemuri, Chintalapalle V. Ramana |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Scanning electron microscope Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Microstructure Nitrogen Nanocrystalline material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystal X-ray photoelectron spectroscopy chemistry Electrical resistivity and conductivity Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 520:1446-1450 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.08.080 |
| Popis: | Nitrogen incorporated tungsten oxide (WO 3 ) films were grown by reactive magnetron sputter-deposition by varying the nitrogen content in the reactive gas mixture keeping the deposition temperature fixed at 400 °C. The crystal structure, surface morphology, chemical composition, and electrical resistivity of nitrogen doped WO 3 films were evaluated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and electrical conductivity measurements. The results indicate that the nitrogen-incorporation induced changes in the microstructure and electrical properties of WO 3 films are significant. XRD measurements coupled with SEM analysis indicate that the increasing nitrogen content decreases the grain size and crystal quality. The nitrogen concentration increases from 0 at.% to 1.35 at.% with increasing nitrogen flow rate from 0 to 20 sccm. The corresponding dc electrical conductivity of the films had shown a decreasing trend with increasing nitrogen content. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect