Spectral dependence of optical constants of heavily doped Si in region of plasma resonance of charge carriers

Autor:	V. D. Tsiporukha, V. P. Polyanskaya, D. I. Bilenko
Rok vydání:	1973
Předmět:	Materials science Condensed matter physics Yield (chemistry) Dispersion relation Dispersion (optics) Doping Physics::Optics General Physics and Astronomy Semiclassical physics Charge carrier Absorption (electromagnetic radiation) Molecular physics Refractive index
Zdroj:	Soviet Physics Journal. 16:145-148
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00892662
Popis:	The semiclassical relationships for the complex refractive index are used to find the regions of integration of the Kramers-Kronig dispersion relation required to yield the spectral dependence of the optical properties of semiconducting materials in the vicinity of the plasma resonance of the charge carriers with a prescribed accuracy. The refractive index n and the absorption coefficientκ of heavily doped Si in the vicinity of the plasma resonance of the charge carriers are determined by the Kramers-Kronig method and by the method of two media. The values of n andκ obtained by these methods are in good agreement with values calculated on the basis of the Drude-Lorentz semiclassical theory of dispersion.
Databáze:	OpenAIRE
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