Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
| Autor: | Samuel Graham, Georges Pavlidis, Spyridon Pavlidis, Eric R. Heller, Ramakrishna Vetury, Elizabeth A. Moore |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Gate resistance Transistor Analytical chemistry 020206 networking & telecommunications 02 engineering and technology 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials Characterization (materials science) law.invention symbols.namesake law Logic gate 0103 physical sciences Thermal Thermography 0202 electrical engineering electronic engineering information engineering symbols Optoelectronics Electrical and Electronic Engineering business Raman spectroscopy |
| Zdroj: | IEEE Transactions on Electron Devices. 64:78-83 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2625264 |
| Popis: | In this paper, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors. Raman thermometry has been used to verify GRT by comparing the channel temperatures measured by both techniques under various bias conditions. To further validate this technique, a thermal finite-element model has been developed to model the heat dissipation throughout the devices. Comparisons show that the GRT method averages the temperature over the gate width, yielding a slightly lower peak temperature than Raman thermography. Overall, this method provides a fast and simple technique to determine the average temperature under both steady-state and pulsed bias conditions. |
| Databáze: | OpenAIRE |
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