X-ray and optical investigation of KCN and HCN passivated structures based on amorphous silicon
| Autor: | Hikaru Kobayashi, Naozumi Fujiwara, Róbert Brunner, J. Rusnák, Martin Kopáni, Masao Takahashi, Emil Pinčík, Matej Jergel |
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| Rok vydání: | 2004 |
| Předmět: |
Amorphous silicon
Aqueous solution Materials science Passivation Silicon Dangling bond Analytical chemistry General Physics and Astronomy Mineralogy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound chemistry X-ray crystallography Crystalline silicon |
| Zdroj: | Applied Surface Science. 235:364-371 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2004.05.108 |
| Popis: | KCN solution treatment of amorphous hydrogenated silicon (a-Si:H) is a new technique for passivation of Si dangling bonds, capable to eliminate the interface states as well as a part of the bulk defects. It is based on the formation of Si–CN bonds by the cyanide treatment. The films were deposited on crystalline silicon (c-Si) and Corning glass substrates and subsequently chemically modified by KCN and HCN solutions. The latter solution was used as a passivation agent for the first time. Different cyanidization solutions in MeOH and water were tested. The X-ray diffraction and optical reflectance spectra of treated a-Si:H films were measured and analyzed. The optical thickness of intrinsic a-Si:H deposited on c-Si, obtained from the reflectance spectra, was apparently changed using HCN 0.1 M water solution. The X-ray measurements indicate a modification of the structure at the intrinsic a-Si:H/c-Si interfaces. The results were compared with those obtained on p-type of a-SiC:H/c-Si and a-SiC:H/glass, a-Si:H/c-Si structures. |
| Databáze: | OpenAIRE |
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