| Autor: |
Roupen Keusseyan, Tim Mobley |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:001364-001377 |
| ISSN: |
2380-4491 |
| DOI: |
10.4071/2015dpc-wp12 |
| Popis: |
Borosilicate glass based wafer technologies are being developed for next generation high speed electronic, telecom and biotech systems; that integrate heterogeneous devices in a single package for improved electrical performance. The primary key to success is to have a well understood via through the glass that can be used as a core to build wafer level packages from. The present paper will discuss developments in through hole formation technology and via metallization materials and processes. Through hole formation in borosilicate glass with corresponding wall morphology and chemistry play important roles in building robust vias through the glass. These hole characteristics and their dependence on performance, defects at the wafer level and key developments that have been achieved to overcome them will be discussed in detail. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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