Tris(ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells
| Autor: | Lev Luchnikov, Denis Kuznetsov, Pavel A. Gostishev, Aldo Di Carlo, Dmitry A. Podgorny, Danila Saranin, S. I. Didenko, Vsevolod N. Mazov, Dmitry S. Muratov, Denis M. Migunov, Alexey R. Tameev, Dmitry A. Lypenko, Marina Orlova |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Auger electron spectroscopy
Fabrication Materials science Non-blocking I/O Context (language use) 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention symbols.namesake Chemical engineering law Solar cell Materials Chemistry symbols 0210 nano-technology Raman spectroscopy Layer (electronics) Perovskite (structure) |
| Zdroj: | Journal of Materials Chemistry C. 6:6179-6186 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/c8tc01169a |
| Popis: | Owing hysteresis free characteristics and good reproducibility, inverted p-i-n perovskite solar cells (PSC) are gaining large interest in the photovoltaic field. In this context, the need for stable materials calls for the development of robust transporting layers compatible with the fabrication processes of the solar cell. In this study, we introduce a new precursor, tris(ethylene diamine) nickel acetate, for low temperature (280–300 °C) deposition of NiO hole transporting layer. Full characterization of the deposited NiO film layer was performed through XRD, Raman and Auger spectroscopy. We found a direct correlation between device performance and NiO thickness with maximum efficiency exceeding 15% for the thin NiO (10 nm) layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|