The influence of ZrO2 doping on microstructure and electrical properties of ZnO-based conductive ceramics
Autor: | Wenbin Cao, Jinfeng Su, Jiaojiao Chen, Jianfeng Zhu, Minge Chen, Qian Liu |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Materials science Dopant Process Chemistry and Technology Sintering 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electrical resistivity and conductivity visual_art 0103 physical sciences Materials Chemistry Ceramics and Composites visual_art.visual_art_medium Grain boundary Ceramic Composite material 0210 nano-technology Temperature coefficient |
Zdroj: | Ceramics International. 47:24959-24965 |
ISSN: | 0272-8842 |
Popis: | ZnO-based conductive ceramic materials doping ZrO2 were prepared at 1320 °C by the conventional solid-state sintering method in air, and the influence of comprehensive properties with different ZrO2-doped content were studied carefully. Microstructure and crystals of the samples were investigated by SEM and XRD respectively. As a donor, Zr4+ increases the carrier concentration and decreases the resistivity of grain and grain boundary. As-prepared samples shown excellent linear V–I characteristics and were suitable for high frequency electric field. With the increasing of dopant ZrO2 contents, the dielectric constant and resistivity of ZnO-based conductive ceramics were influenced significantly, moreover, the resistance-temperature characteristics presents the negative temperature coefficient effects. ZnO-based conductive ceramics exhibited excellent comprehensive electrical performance with 0.30 mol% ZrO2-doping, in which the nonlinear coefficient is 1.01, the grain boundary barrier height is 0.014 eV, and the resistance temperature coefficient is −2.6×10−3/°C. |
Databáze: | OpenAIRE |
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