Defect studies in electron-irradiated ZnO and GaN
| Autor: | David C. Look, G. C. Farlow, Filip Tuomisto |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Condensed matter physics Annealing (metallurgy) Gallium nitride Electron Conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials Positron annihilation spectroscopy chemistry.chemical_compound chemistry Vacancy defect Irradiation Electrical and Electronic Engineering Radiation hardening |
| Zdroj: | Physica B: Condensed Matter. :604-608 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2007.09.032 |
| Popis: | We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K. |
| Databáze: | OpenAIRE |
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