Influence of Si(100) surface flattening process on nonvolatile memory characteristics of Hf-based MONOS structures
| Autor: | Sohya Kudoh, Shun-ichiro Ohmi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
0209 industrial biotechnology Materials science Silicon business.industry Annealing (metallurgy) chemistry.chemical_element 02 engineering and technology Surface finish 01 natural sciences Flattening Non-volatile memory 020901 industrial engineering & automation chemistry Logic gate 0103 physical sciences Electronic engineering Surface roughness Optoelectronics business Scaling |
| Zdroj: | 2017 75th Annual Device Research Conference (DRC). |
| DOI: | 10.1109/drc.2017.7999432 |
| Popis: | Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type non-volatile memory [1]. Even for MONOS memory with high-k gate stacks, such as the in-situ formation of Hf-based MONOS structure, the scaling is necessary to reduce the operating voltage [2]. However, as the gate stacks scaling, the interface roughness at the gate insulator/Si is one of the critical issues to obtain the high reliability and performance of MIS devices [3]. In our previous report, atomically flat Si(100) surface was formed by annealing in Ar/H 2 ambient for the first time [4]. In this study, electrical characteristics of Hf-based MONOS structure on atomically flat Si(100) surface were investigated. |
| Databáze: | OpenAIRE |
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