A broadband low cost GaN-on-silicon MMIC amplifier
Autor: | B. Geller, Apurva Chaudhari, Andrew Edwards, Allen W. Hanson, Isik C. Kizilyalli |
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Rok vydání: | 2008 |
Předmět: |
Materials science
Silicon business.industry Electrical engineering Distributed amplifier Wide-bandgap semiconductor chemistry.chemical_element Gallium nitride Integrated circuit design Substrate (electronics) chemistry.chemical_compound Electricity generation chemistry Optoelectronics business Monolithic microwave integrated circuit |
Zdroj: | 2008 IEEE Radio Frequency Integrated Circuits Symposium. |
DOI: | 10.1109/rfic.2008.4561492 |
Popis: | The design and performance of a 0.1 to 5 GHz medium power distributed amplifier is described. The circuit is realized using a low-cost GaN-on-silicon MMIC process featuring 0.5 mum gate length GaN HFETs on a 150 mum thick high resistivity silicon substrate. The circuit was designed using a non-linear FET model and standard passive component models. The first pass circuit demonstrates a saturated output power of 2 W and a maximum efficiency of greater than 30% at 1 GHz at a drain bias of 15 V, and a saturated output power of 3 W and maximum efficiency of 23% at 2.5 GHz with a drain bias of 28 V. |
Databáze: | OpenAIRE |
Externí odkaz: |
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