Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC
| Autor: | Alexia Drevin-Bazin, Jean François Barbot, Thierry Cabioc’h, Marie France Beaufort |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Annealing (metallurgy) Mechanical Engineering Ultra-high vacuum Metallurgy Analytical chemistry Schottky diode Sputter deposition Condensed Matter Physics Microstructure Epitaxy Mechanics of Materials General Materials Science High-resolution transmission electron microscopy Ohmic contact |
| Zdroj: | Materials Science Forum. :845-848 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.717-720.845 |
| Popis: | In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C. |
| Databáze: | OpenAIRE |
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