| Autor: |
T. Suligoj, M. Koricic, Petar Biljanović |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748). |
| DOI: |
10.1109/smicnd.2004.1403016 |
| Popis: |
The observed improvement of BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product of horizontal current bipolar transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. It reduces the maximum electric field in the intrinsic transistor. A simple model is developed to physically explain the improvement of the breakdown voltage. An optimization of HCBT structure with respect to the BV/sub CEO/ and f/sub T//spl middot/BV/sub CEO/ product is given by the simulation. BV/sub CEO/ is increased by 23.6%, while f/sub T/ is reduced only by 6.3%, resulting in higher f/sub T/BV/sub CEO/ product. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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