Correlation between gate oxide reliability and the profile of the trench top corner in Shallow Trench Isolation (STI)

Autor:	Han Sin Lee, H. K. Kang, Moon Han Park, Tai-su Park, Moon Yong Lee, Sang Dong Kwon, Young Bum Koh, Yu Gyun Shin
Rok vydání:	2002
Předmět:	Materials science genetic structures business.industry Structural engineering musculoskeletal system Reliability (semiconductor) Gate oxide Etching (microfabrication) Shallow trench isolation MOSFET Trench Composite material business NMOS logic Stress concentration
Zdroj:	International Electron Devices Meeting. Technical Digest.
DOI:	10.1109/iedm.1996.554088
Popis:	In order to develop a Shallow Trench Isolation (STI) which does not have trench corner induced degradation of the gate oxide, its integrities were evaluated with rounded, non-rounded top corner, and an addition of CVD SiO/sub 2/ spacer. In the experiment, we found that the rounded and SiO/sub 2/ spacered STI showed the best result meaning no harmful influence of the corner to the gate oxide integrity. Also, etch-back processes of the filled CVD SiO/sub 2/ were modified to eliminate the degradation of the gate oxide by a stress concentration at top corner kinks.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27f8270420fdd508b4f7c8f31093c2c5 https://doi.org/10.1109/iedm.1996.554088 Zobrazit plný text záznamu