Spreading-resistance temperature sensor on silicon-on-insulator
| Autor: | P.T. Lai, J.K.O. Sin, C.L. Chan, Bin Li |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Spreading resistance profiling business.industry Oxide Silicon on insulator Substrate (electronics) Electronic Optical and Magnetic Materials chemistry.chemical_compound Operating temperature chemistry Low-power electronics Optoelectronics Wafer Silicon bandgap temperature sensor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 20:589-591 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.798053 |
| Popis: | A spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on bulk silicon wafers. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 /spl mu/m) SOI SRT sensor can reach 450/spl deg/C, much higher than 350/spl deg/C of thick-film (10 /spl mu/m) SOI SRT sensor under the same current level. With complete oxide isolation, this sensor structure can be potentially used in low power integrated sensors operating at temperatures as high as 450/spl deg/C. |
| Databáze: | OpenAIRE |
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