GaN-based photonic crystal surface emitting lasers with central defects

Autor:	Tzeng Tsong Wu, Tien-Chang Lu, Peng Hsiang Weng, Yen Ju Hou
Rok vydání:	2011
Předmět:	Materials science Physics and Astronomy (miscellaneous) Scattering business.industry Physics::Optics Laser Threshold energy Crystallographic defect law.invention Semiconductor laser theory Wavelength Optics law Optoelectronics business Lasing threshold Photonic crystal
Zdroj:	Applied Physics Letters. 99:221105
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3665251
Popis:	The GaN-based photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The threshold energy densities increased from 3.23 to 3.51 mJ/cm2 when the central defect size increased. In addition, lasing wavelengths decreased from 400 nm to 390 nm due to the guided mode shifting phenomenon for the PCSEL cavities with larger central defects. The tendency of threshold gain and resonance wavelength for PCSELs with different central defects were calculated by the multiple scattering method and well matched to the experimental results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27f09a19e56dba920506129e28a88b6d https://doi.org/10.1063/1.3665251 Zobrazit plný text záznamu