Source-drain breakdown in thin SOI transistors

Autor:	J.B. McKitterick
Rok vydání:	2003
Předmět:	Materials science business.industry law Thin-film transistor Transistor Optoelectronics Silicon on insulator Time-dependent gate oxide breakdown business Voltage law.invention
Zdroj:	IEEE SOS/SOI Technology Conference.
DOI:	10.1109/soi.1989.69744
Popis:	Summary form only given. The problem of premature source-drain breakdown in thin SOI FETs is studied, both numerically with PISCES and analytically, with the gate voltages set so that the device is off. The analysis indicates that an LDD structure is required in order to improve the source-drain breakdown in thin SOI FETs. The LDD is needed even at comparatively long gate lengths, especially as the quality of the LDD will be even greater. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27eaabb2abd8e127db3fc1e9ad869505 https://doi.org/10.1109/soi.1989.69744 Zobrazit plný text záznamu