A 30-GHz f/sub T/ quasi-self-aligned single-poly bipolar technology
| Autor: | Alain Chantre, L. Ailloud, J. de Pontcharra, L. Vendrame, D. Thomas, T. Gravier, E. Behouche |
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| Rok vydání: | 1997 |
| Předmět: |
Reproducibility
Materials science Silicon business.industry Bipolar junction transistor Transistor Analytical chemistry chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials law.invention Ion implantation chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics Breakdown voltage Sensitivity (control systems) Electrical and Electronic Engineering business Cmos process |
| Zdroj: | IEEE Transactions on Electron Devices. 44:2091-2097 |
| ISSN: | 0018-9383 |
| Popis: | In this paper, we report the state-of-the-art results obtained in quasi-self-aligned (QSA) single polysilicon NPN bipolar transistors fabricated within a low-complexity 0.5-/spl mu/m CMOS process. Our devices demonstrate nearly ideal static characteristics and very good frequency performance. In fact, the obtained 30-GHz maximum f/sub T/ and 4.1 V breakdown voltage are comparable to the best reported results for single-poly self-aligned (SA) transistors. Some details of the technological process as well as statistical measurements performed on the different optimization splits are presented. The f/sub T/ and f/sub max/ on-wafer high-frequency measurements are discussed in terms of reproducibility, sensitivity to process parameters, and device geometry. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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