The state of oxygen and its interaction with silicon impurity in GaAs
| Autor: | A.I. Saprikin, L.A. Borisova, M.F. Reznitchenko |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
inorganic chemicals
chemistry.chemical_classification Silicon Mechanical Engineering Doping Inorganic chemistry technology industry and agriculture Analytical chemistry Oxide chemistry.chemical_element Condensed Matter Physics Acceptor Oxygen Gallium arsenide chemistry.chemical_compound chemistry Mechanics of Materials Impurity General Materials Science Inorganic compound |
| Zdroj: | Materials Research Bulletin. 21:77-84 |
| ISSN: | 0025-5408 |
| DOI: | 10.1016/0025-5408(86)90032-2 |
| Popis: | Defects appearing in GaAs crystals and layers (LPE), which were doped with oxygen or silicon and oxygen, were studied by the photo- and electroabsorption method. The concentration dependence of the defects was studied and it was shown that the deep level defects are connected with oxygen and their concentrations were determined by the nature of doping oxide (Ga2O3 or As2O3). The deep level defects D1 (Ec − O, 78 eV) prevail both in the crystals and layers doped with Ga2O3. The deep donor level D2 (Ec −O, 47 eV) predominate in the case of doping with As2O3. Another deep level (Ec − O, 82 eV) with optical characteristics close to D1 was observed at doping by As2O3 also. The complex center with the acceptor level (Ey + 1,26 eV) is due to the interaction of oxygen with silicon and the formation of [SiO] complex. |
| Databáze: | OpenAIRE |
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