Study of a Charge-Based Biosensor and Reconfigurability using BESOI MOSFET
| Autor: | Katia R. A. Sasaki, L. S. Yojo, Joao Antonio Martino, Ricardo C. Rangel |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | ECS Transactions. 97:115-120 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/09705.0115ecst |
| Popis: | The Back Enhance (BE) SOI MOSFET is a device whose operation can be tuned by the back gate bias (VGB), i.e., it can act as an n- or p-type MOSFET if VGB is positive or negative enough, respectively. This characteristic was explored in the bio-sensing application, in which a charge-based sensor was studied through simulation. Physical dimensions (gate and underlap lengths, gate oxide, silicon and buried oxide thicknesses) were varied in order to determine the most sensitive case. The buried oxide thickness presented highest variation in the results, showing the importance of the substrate on its operation. The biomaterial charge concentration analysis showed a better sensitivity of the device for positive charges when biased as an n-type transistor, while the p-type bias presented better sensitivity to negative charges. Thus, the versatility of the BESOI MOSFET can be used as an advantage in the field of biosensors. |
| Databáze: | OpenAIRE |
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