Defect formation and crystallization in a-Si:H induced by Si+ implantation
| Autor: | N.R. Rahimov, Kh. Yu. Mavlyanov, V. A. Terekhov, E.V. Bogdanova, E. P. Domashevskaya, O.A. Golikova, A.N. Kuznetsov |
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| Rok vydání: | 2002 |
| Předmět: |
Fermi level position
Chemistry Mineralogy Condensed Matter Physics Nanocrystalline material Electronic Optical and Magnetic Materials Degree (temperature) law.invention Condensed Matter::Materials Science Film structure Crystallography law Amorphous matrix Materials Chemistry Ceramics and Composites Crystallization |
| Zdroj: | Journal of Non-Crystalline Solids. :783-787 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(02)00938-9 |
| Popis: | The effects of Si+ keV-ion implantation on the a-Si:H film structure and electronic parameters have been investigated. It is shown how defect formation in the films and their crystallization after the implantation depend on the initial material characteristics: Fermi level position, deposition-induced defect density, SiH bonding, disorder degree and nanocrystalline inclusions in an amorphous matrix. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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