Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P2S5/(NH4)2Sx Surface Treatments

Autor:	Li-Zen Hsieh, Liann-Bie Chang, Ming-Jer Jeng, Ping-Yu Kuei, Chia-Hwa Chang
Rok vydání:	2005
Předmět:	Materials science business.industry Schottky diode Optoelectronics Algan gan business
Zdroj:	Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2005.i-5-5
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27de2948647020333d752052acea7a72 https://doi.org/10.7567/ssdm.2005.i-5-5 Zobrazit plný text záznamu