Non-local aspects of breakdown in pin diodes
| Autor: | G W Smith, S Millidge, D R Wight, M Kane, DC Herbert |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Chemistry
business.industry Ionization coefficient PIN diode Condensed Matter Physics Non local Electronic Optical and Magnetic Materials law.invention Optics law Velocity overshoot Ionization Materials Chemistry Overshoot (microwave communication) Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Diode |
| Zdroj: | Semiconductor Science and Technology. 10:344-347 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/10/3/018 |
| Popis: | Measurements of breakdown voltage in p-i-n diodes with thin i regions are compared with local and non-local theoretical calculations. It is found that overshoot effects compensate for the dead space at high fields close to breakdown but that non-local aspects become stronger at lower fields. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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