AC output conductance of SOI MOSFETs and impact on analog applications

Autor:	Chunlin Liang, R. Tu, D. Sinitsky, Chenming Hu, Mansun Chan, Jeffrey Bokor
Rok vydání:	1997
Předmět:	Materials science business.industry Dynamic range MOSFET Electrical engineering Conductance Optoelectronics Silicon on insulator Electrical and Electronic Engineering business Capacitance Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 18:36-38
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.553036
Popis:	We report a frequency-dependent output conductance of partially depleted SOI MOSFETs. For high-frequency analog applications, the output conductance is less than half and the dynamic range of V/sub d/ is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27d02f1eaa816b086dea024efafe1104 https://doi.org/10.1109/55.553036 Zobrazit plný text záznamu