Effect of processing conditions on the growth of strained Si1−XGeX layers on Si

Autor:	K. Y. Suh, Hong H. Lee
Rok vydání:	1998
Předmět:	Phase boundary Morphology (linguistics) Planar Materials science Characteristic length Condensed matter physics Semiconductor materials General Physics and Astronomy Nanotechnology Island growth Epitaxy
Zdroj:	Journal of Applied Physics. 84:2361-2363
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.368347
Popis:	We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1−XGeX films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition–temperature and composition–pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27d002bf0e05ea5a98d673afbd69d925 https://doi.org/10.1063/1.368347 Zobrazit plný text záznamu