Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs

Autor:	S. V. Subach, E. V. Chernikov, V. S. Lukash, I. V. Ivonin, A. N. Tarzimyanov, L. G. Lavrent'eva
Rok vydání:	1996
Předmět:	Materials science General Physics and Astronomy Mass spectrometry Chloride Decomposition Gallium arsenide chemistry.chemical_compound Chemical engineering chemistry Transmission electron microscopy Etching (microfabrication) medicine Indium phosphide medicine.drug Solid solution
Zdroj:	Russian Physics Journal. 39:571-575
ISSN:	1573-9228 1064-8887
DOI:	10.1007/bf02437023
Popis:	The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. It is shown that decomposition and/or etching of the surface oxide film and formation of a chemically pure substrate surface occur in the initial stage of the process. The growth islets that form on this surface constitute a solid solution in InP. A model of the process is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27cceb031e7c5fe524504f247edd4dc6 https://doi.org/10.1007/bf02437023 Zobrazit plný text záznamu Full text from SpringerLink