Ultra-high field transport in GaN-based heterostructures
Autor: | Norbert Klein, Svetlana Vitusevich, E. Drok, H. Lüth |
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Rok vydání: | 2006 |
Předmět: |
Drift velocity
Materials science business.industry Heterojunction Biasing Electron Conductivity Low frequency Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Nuclear magnetic resonance Electric field Optoelectronics Electrical and Electronic Engineering Joule heating business |
Zdroj: | Semiconductor physics, quantum electronics and optoelectronics. 9:66-69 |
ISSN: | 1605-6582 1560-8034 |
DOI: | 10.15407/spqeo9.03.066 |
Popis: | This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10 7 cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region. |
Databáze: | OpenAIRE |
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