Ultra-high field transport in GaN-based heterostructures

Autor: Norbert Klein, Svetlana Vitusevich, E. Drok, H. Lüth
Rok vydání: 2006
Předmět:
Zdroj: Semiconductor physics, quantum electronics and optoelectronics. 9:66-69
ISSN: 1605-6582
1560-8034
DOI: 10.15407/spqeo9.03.066
Popis: This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10 7 cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.
Databáze: OpenAIRE