| Autor: |
Lawrence C. West, Gregory N. Henderson, Thomas K. Gaylord, Elias N. Glytsis, E. Anemogiannis, Moses T. Asom, Charles W. Roberts |
| Rok vydání: |
1993 |
| Předmět: |
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| Zdroj: |
Microelectronics Journal. 24:805-816 |
| ISSN: |
0026-2692 |
| DOI: |
10.1016/0026-2692(93)90079-t |
| Popis: |
Given two energy states (levels) in a quantum well formed by two potential barriers of finite thickness, elementary quantum mechanics tells us that the lower energy state is more tightly bound than the upper state. This produces a longer spatial confinement lifetime in the lower state than in the upper state. This ratio of lifetimes is opposite to that needed for laser action between these states. Furthermore, the lifetime of the lower energy state must be significantly shorter than the electron scattering time for the upper state. These facts have blocked the development of lasers based on these transitions. However, in this paper we report experimental and analytical results on a versatile type of semiconductor heterostructure that overcomes these difficulties. Unlike previous devices, this structure relies on an optical transition between two states which are both above-barrier quasibound states in the ‘classical’ continuum. The oscillator strength is large and the operation of the device clearly demonstrates coherent electron wave behavior. Such structures could represent the basis for a new room-temperature infrared semiconductor laser. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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