| Autor: |
Genevieve Martin, Andree Wibowo, Mark Wanlass, F. Tuminello, Glen Hillier, Noren Pan, Manuel J. Romero, Christopher Youtsey, Rao Tatavarti |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 35th IEEE Photovoltaic Specialists Conference. |
| Popis: |
InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple junction (TJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO IMM solar cells exhibited an efficiency of 30% at one sun AM1.5D illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The TJ ELO cells had fill factor (FF) >85%, open circuit voltage (Voc) of 2.78V, and short circuit current density (Jsc) of 12.64 mA/cm2. IMM ELO cells exhibited a peak efficiency of 36.3% at concentration of 264suns. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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